CMOS front-end process: substrate preparation, active area process, STI isolation, dual well process, gate oxide, polysilicon gate process, LDD treatment, sidewall process, source and drain ion implantation. CMOS back-end process: ILD process, contact hole CT process, metal layer 1 process, via 1 process, metal layer 2 process, top via (VIAT) process, TOP Metal layer, passivation layer process
